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Дефекты и примеси в полупроводниковом кремнии - Рейви К. 1984 DJVU М.Мир BOOKS TECHNICAL SCIENCES
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Дефекты и примеси в полупроводниковом кремнии
Author: Рейви К.
Year: 1984
Number of pages: 472
Format: DJVU
File size: 14 MB
Language: RU

The fundamental monograph of the famous American author is devoted to the technology of obtaining high-purity semiconductor silicon used for the production of integrated circuits and semiconductor devices for various purposes. The effect of defects and impurities on the electrical properties of silicon crystals was investigated.

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