The use of low dielectric constant low k interdielectrics in multilevel structure integrated circuits ICs can lower line to line noise in interconnects and alleviate power dissipation issues by reducing the capacitance between the interconnect conductor lines Because of these merits low k interdielectric materials are currently in high demand in the development of advanced ICs One important approach to obtaining low k values is the incorporation of nanopores into dielectrics This book provides an overview of the methodologies and characterization techniques used for investigating low k nanoporous interdielectrics