Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP–InP, GaInAsP–GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world’s first InPGaInAs superlattice that was fabricated by the author ? this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors.